Display apparatus

ABSTRACT

A display apparatus includes a first substrate, a light emitting device and a first insulating layer. The light emitting device and the first insulating layer are disposed on the first substrate. The first insulating layer has an opening, and the light emitting device is disposed in the opening. A portion of a light emitted by the light emitting device passes through the first substrate. An angle between a side wall of the opening and the first substrate is greater than or equal to 60°, and less than or equal to 150°.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation application of and claims thepriority benefit of U.S. application Ser. No. 15/585,175, filed on May3, 2017, now allowed, which claims the priority benefits of U.S.provisional application Ser. No. 62/339,107, filed on May 20, 2016, U.S.provisional application Ser. No. 62/350,169, filed on Jun. 14, 2016, andChina application serial no. 201710007030.9, filed on Jan. 5, 2017. Theentirety of each of the above-mentioned patent applications is herebyincorporated by reference herein and made a part of this specification.

BACKGROUND OF THE DISCLOSURE Technical Field

The disclosure relates to a display apparatus, and more particularly, toa display apparatus having a reflection structure.

Description of Related Art

A light emitting diode (LED) display apparatus has advantages such asactive light emission, high brightness, high contrast, low powerconsumption, and has advantages such as longer lifespan as compared toan organic light emitting diode (OLED) display apparatus. Therefore, inrecent years, LED display apparatus has become one of the mostextensively developed technologies for new type displays. To meet theneed of high resolution, LED display apparatus is being developed towarda direction to be composed of an active device array substrate andmicron-sized LEDs arranged in an array.

SUMMARY

The disclosure provides a display apparatus, which can be applied to alarge area display apparatus or a double-sided display apparatus.

The display apparatus of the disclosure includes a first substrate, alight emitting device, and a first reflection structure. The lightemitting device is disposed on the first substrate, wherein a height ofthe light emitting device is equal to or greater than 1 μm, and lessthan or equal to 20 μm. The first reflection structure is disposedcorresponding to the light emitting device, wherein a light emitted bythe light emitting device is reflected by the first reflectionstructure, and then emitted from the first substrate.

Based on the above, in the display apparatus of the disclosure, a lightemission direction of the light emitting device can be controlled by thereflection structure, such that the light emitted by the light emittingdevice is reflected by the first reflection structure, and then emittedfrom the first substrate.

To make the aforementioned features and advantages of the disclosuremore comprehensible, several embodiments accompanied with figures aredescribed in detail below.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 to FIG. 28 are schematic partial cross-sectional views of displayapparatuses according to a plurality of embodiments of the disclosure.

DESCRIPTION OF THE EMBODIMENTS

The directional terms mentioned in the following embodiments, forexample, “on,” “under,” “left,” “right,” “front,” “back,” and so on,merely refer to directions in the accompanying drawings. Therefore, thedirectional terms are used to illustrate rather than limit thedisclosure. For example, in the descriptions below, an expression of “afirst object is on a second object” covers embodiments in which thefirst object directly contacts the second object, and embodiments inwhich the first object does not directly contact the second object.Besides, in the embodiments in which the first object does not directlycontact the second object, there may be other objects or simply a spacebetween the first object and the second object.

FIG. 1 is a schematic partial cross-sectional view of a displayapparatus according to an embodiment of the disclosure. Referring toFIG. 1, a display apparatus 50A in the present embodiment includes afirst substrate 102, a light emitting device 118, and a first reflectionstructure 122. The light emitting device 118 is disposed on the firstsubstrate 102, wherein a height h1 of the light emitting device 118 isequal to or greater than 1 μm and less than or equal to 20 μm. If theheight h1 of the light emitting device 118 is less than 1 μm, structuralstrength of the light emitting device 118 may be weakened and moredefects may be generated. If the height h1 of the light emitting device118 is greater than 20 μm, illumination efficiency or heat dissipationefficiency of the light emitting device 118 may be reduced. In anotherembodiment, the height h1 of the light emitting device 118 may be equalto or greater than 2 μm and less than or equal to 12 μm, or may be equalto or greater than 5 μm and less than or equal to 10 μm. The firstreflection structure 122 is disposed corresponding to the light emittingdevice 118. In the present embodiment, the light emitting device 118 maybe disposed between the first substrate 102 and a second substrate 120,and the first reflection structure 122 is disposed on one side of thesecond substrate 120 facing the light emitting device 118.

In the display apparatus 50A of the present embodiment, a light emittedby the light emitting device 118 can be reflected by the firstreflection structure 122, and then emitted outward from the firstsubstrate 102 (as shown by the arrows in FIG. 1). Furthermore, a finaldisplay surface is located on one side of the first substrate 102 in thedisplay apparatus 50A. Therefore, the design of the present embodimenteasily changes a light emission direction of the light emitting device118, such that a display direction of the display apparatus 50A moreeasily meets different design requirements.

The display apparatus 50A further includes a driving device T. Thedriving device T may be disposed on the first substrate 102, and thelight emitting device 118 is staggered with the driving device T. Inthis way, there is no need to bond the light emitting device 118 ontothe driving device T. Therefore, before bonding the light emittingdevice 118 to the first substrate 102, it may not be necessary todispose a planarization layer between the light emitting device 118 andthe first substrate 102. Accordingly, when the light emitting device 118is bonded to the first substrate 102, a problem of softening of theplanarization layer between the light emitting device 118 and the firstsubstrate 102 due to heating can be prevented, thus alignment precisionof the bonding can be improved.

A special patterning process may be performed on the first reflectionstructure 122 of the present embodiment, such that the reflected lightis emitted toward a more uniform direction, thus a high brightnessdisplay effect is more likely to be attained. For example, the firstreflection structure 122 is, for instance, a metal layer or anomnidirectional reflective mirror (ODM). The ODM is, for instance, amultilayer structure composed by metal layers and oxide layers. Amaterial of the metal layers may include aluminum and silver, and amaterial of the oxide layers may include silicon oxide. In oneembodiment, the display apparatus 50A may further include a conductivevia 121 and an electrode 123. The electrode 123 may be disposed on thefirst substrate 102, and the conductive via 121 may be electricallyconnected between the first reflection structure 122 and the electrode123. The electrode 123 may transmit a common signal, and the commonsignal may be transmitted to an electrode 116 of the light emittingdevice 118 through the conductive via 121 and the first reflectionstructure 122 in sequence. In one embodiment, materials of theconductive via 121 and the electrode 123 may include metal or otherconductive materials.

The display apparatus 50A of the present embodiment may further includea wavelength conversion layer 124 disposed on one side of the firstsubstrate 102. In the present embodiment, the wavelength conversionlayer 124 is disposed on one side of the first substrate 102 that isaway from the light emitting device 118. In other embodiments, thewavelength conversion layer 124 may also be disposed on one side of thefirst substrate 102 that is adjacent to the light emitting device 118.In one embodiment, an orthogonal projection of the wavelength conversionlayer 124 on the first substrate 102 partially overlaps with anorthogonal projection of the light emitting device 118 on the firstsubstrate 102. In other embodiments, the orthogonal projection of thewavelength conversion layer 124 on the first substrate 102 maycompletely overlap with the orthogonal projection of the light emittingdevice 118 on the first substrate 102. The orthogonal projection refersto a set of projection points of mutually parallel projection linespassing through various points on a projection object (for example, thewavelength conversion layer 124 herein) on a projection plane (forexample, a surface of the first substrate 102 herein), and theaforementioned mutually parallel projection lines are perpendicular tothe projection plane. In this way, the light provided by the lightemitting device 118 passes through the wavelength conversion layer 124before being emitted outward. The wavelength conversion layer 124 may beapplied to change a wavelength of the light emitted from the lightemitting device 118. For example, the light emitting device 118 mayprovide an invisible light, and the wavelength conversion layer 124converts the invisible light to a light with desired color such as redlight, blue light, green light, or so forth. In addition, the lightemitting device 118 may also provide a visible light, and the wavelengthconversion layer 124 converts the visible light to a light with desiredcolor such as red light, blue light, green light, or so forth. In thepresent embodiment, the wavelength conversion layer 124 may be a quantumdot layer. In other embodiments, the wavelength conversion layer 124 mayalso be a quantum dot layer, a phosphor powder layer, a fluorescentpowder layer or a combination thereof.

In other embodiments, the aforementioned wavelength conversion layer 124may be replaced with a color filter layer. In other words, either thewavelength conversion layer or the color filter layer may be disposed onone side of the first substrate 102.

The light emitting device 118 of the present embodiment is a verticalLED for exemplary purposes. However, in other embodiments, a flip-chipLED or other light emitting devices may also be adopted as the lightemitting device 118. The light emitting device 118 may be a micron-sizedLED. In one embodiment, a length and a width of the light emittingdevice 118 are respectively less than or equal to 300 μm, and equal toor greater than 1 μm. In other embodiments, the length and the width ofthe light emitting device 118 may further be respectively less than orequal to 100 μm and greater than or equal to 2 μm, less than or equal to20 μm and greater than or equal to 3 μm, or less than or equal to 10 μmand greater than or equal to 5 μm.

A first insulating layer 127 may be disposed on the first substrate 102of the present embodiment. In the present embodiment, the firstinsulating layer 127 may be a multilayer structure, which includes aninsulating layer 126 and an insulating layer 128 sequentially disposedon the first substrate 102. The insulating layer 126 and the insulatinglayer 128 have an opening P10, and the light emitting device 118 isdisposed at the opening P10. In other embodiments, the first insulatinglayer 127 may also be a single-layer structure. The first insulatinglayer 127 has the opening P10, and the light emitting device 118 isdisposed at the opening P10. At least one of the insulating layer 126and the insulating layer 128 may be formed of a light shieldingmaterial, and may be used as (but not limited to) a black matrix (BM).Therefore, if a plurality of light emitting devices are disposed in thedisplay apparatus 50A, the light emitted from adjacent light emittingdevices can be blocked, and the adjacent light emitting devices areprevented from interfering with each other, so as to improve displayquality. Additionally, the insulating layer 126 or the insulating layer128 formed of the light shielding material may further cover the drivingdevice T to prevent the driving device T from reflecting external light,which may be observed by users and the display quality may be affected.Furthermore, the insulating layer 126 may further protect the drivingdevice T. An angle θ between a side wall of the opening P10 of firstinsulating layer 127 and the first substrate 102 is, for instance, lessthan or equal to 150° and greater than or equal to 60°. In anotherembodiment, the angle θ between the side wall of the opening P10 and thefirst substrate 102 is, for instance, less than or equal to 135° andgreater than or equal to 90°. The first reflection structure 122, forinstance, roughly covers one side of the opening P10 that is close tothe second substrate 120. The wavelength conversion layer 124 may bedisposed at one side of the first substrate 102 that is opposite to thelight emitting device 118, and may roughly cover the opening P10. Asecond insulating layer 132 may further be disposed on the firstsubstrate 102. The second insulating layer 132 fills the opening P10 andcovers the light emitting device 118 and the insulating layer 128. Inone embodiment, the second insulating layer 132 may be a planarizationlayer. In addition, the first reflection structure 122, for instance, isformed on the second insulating layer 132. In the present embodiment, athird insulating layer 133 may further be disposed between the secondsubstrate 120 and the second insulating layer 132. The third insulatinglayer 133 may be located on the same side as the first reflectionstructure 122, such that adjacent first reflection structures 122 may beseparated from each other. In one embodiment, the third insulating layer133 may be formed of a light shielding material, so as to be used as(but not limited to) a BM, in order to prevent the adjacent lightemitting devices from interfering with each other.

The driving device T includes, for instance, a gate G, a gate insulatinglayer GI, a channel layer CH, a source S, and a drain D. A material ofthe channel layer CH, for instance (but not limited to), includesamorphous silicon or an oxide semiconductor material. The oxidesemiconductor material includes, for instance (but not limited to),indium-gallium-zinc oxide (IGZO), zinc oxide, tin oxide (SnO),indium-zinc oxide, gallium-zinc oxide (GZO), zinc-tin oxide (ZTO),indium-tin oxide, or so forth. That is, in the present embodiment, thedriving device T is, for instance, an amorphous silicon thin filmtransistor or an oxide semiconductor thin film transistor. However, thedisclosure is not limited thereto. In other embodiments, the drivingdevice T may also be a low temperature polysilicon thin film transistor,a silicon-based thin film transistor, or a microcrystalline silicon thinfilm transistor. Besides, in the present embodiment, the driving deviceT is a bottom gate transistor. However, the disclosure is not limitedthereto. In other embodiments, the driving device T may also be a topgate transistor.

Additionally, the gate insulating layer GI is disposed between the gateG and the channel layer CH. The gate insulating layer GI is conformallyformed on the first substrate 102, and covers the gate G. A material ofthe gate insulating layer GI includes, for instance (but not limitedto), an inorganic material, an organic material or a combinationthereof. The inorganic material is, for instance (but not limited to),silicon oxide, silicon nitride, silicon oxynitride, or a stacked layerof at least two of the aforementioned materials. The organic materialis, for instance (but not limited to), a polymer material such as apolyimide-based resin, an epoxy-based resin, or an acrylic resin, and soon. Moreover, the source S and the drain D are located on the channellayer CH, and the source S is electrically connected to a data line DL.In addition, in the present embodiment, a fourth insulating layer BP mayfurther cover the driving device T to protect the driving device T. Thefourth insulating layer BP is conformally formed on the first substrate102, and a material of the fourth insulating layer BP is, for instance(but not limited to), an inorganic material, an organic material or acombination thereof. The inorganic material is, for instance (but notlimited to), silicon oxide, silicon nitride, silicon oxynitride, or astacked layer of at least two of the aforementioned materials. Theorganic material is, for instance (but not limited to), a polymermaterial such as a polyimide-based resin, an epoxy-based resin, or anacrylic resin, and so on. In the present embodiment, the displayapparatus 50A may further include a circuit storage capacitor Cst, whichincludes an upper electrode 106 a and a lower electrode 106 b. The upperelectrode 106 a is, for instance, connected to the drain D, and thelower electrode 106 b is, for instance, a common electrode.

The light emitting device 118 of the present embodiment may include anelectrode 108, a P-type semiconductor layer 110, a multiple quantum wellstructure 112, an N-type semiconductor layer 114, and an electrode 116.The electrode 108 may be disposed on the fourth insulating layer BP andmay be staggered with the driving device T. The P-type semiconductorlayer 110, the multiple quantum well structure 112 and the N-typesemiconductor layer 114 are located between the electrode 108 and theelectrode 116, and the multiple quantum well structure 112 is locatedbetween the N-type semiconductor layer 114 and the P-type semiconductorlayer 110. In the present embodiment, a height h of the light emittingdevice 118 represents a distance from a bottom surface of the electrode108 to a top surface of the electrode 116. In addition, the displayapparatus 50A may further include a transparent conductive structure104, which is disposed between the fourth insulating layer BP and thelight emitting device 118, and is electrically connected to theelectrode 108 of the light emitting device 118 and the drain D of thedriving device T. In one embodiment, the transparent conductivestructure 104 may be a multilayer structure. Furthermore, the electrode116 may be electrically connected to the first reflection structure 122,such that the common signal is transmitted to the electrode 116 throughthe electrode 123, the conductive via 121 and the first reflectionstructure 122 in sequence. In one embodiment, the electrode 123 may belocated on the fourth insulating layer BP. In other embodiments, theelectrode 123 may be located on the same layer as at least one of thegate G, the source S, and the drain D of the driving device T, and theupper electrode 106 a or the lower electrode 106 b, which means they maybe composed of the same material layer formed by the same patterningprocess.

Referring to FIG. 1 and FIG. 2 together, a display apparatus 50B shownin FIG. 2 is similar to the display apparatus 50A in FIG. 1. The firstsubstrate 102 in FIG. 2 has a recess R, and the wavelength conversionlayer 124 is disposed in the recess R to form an embedded wavelengthconversion layer. In the present embodiment, the wavelength conversionlayer 124 may be formed to be aligned with a bottom surface of the firstsubstrate 102 (as shown in FIG. 2). In other embodiments, the wavelengthconversion layer 124 may not be aligned with the bottom surface of thefirst substrate 102. That is, the wavelength conversion layer 124 may beformed protruding from or recessed in the bottom surface of the firstsubstrate 102.

Referring to FIG. 1 and FIG. 3 together, a display apparatus 50C shownin FIG. 3 is similar to the display apparatus 50A in FIG. 1. The displayapparatus 50C in FIG. 3 further includes a color filter layer 125. Thewavelength conversion layer 124 is disposed between the first substrate102 and the color filter layer 125. In addition, an orthogonalprojection of the color filter layer 125 on the first substrate 102 atleast partially overlaps with the orthogonal projection of the lightemitting device 118 on the first substrate 102. In the presentembodiment, the wavelength conversion layer 124 is, for instance (butnot limited to), a phosphor powder layer.

Referring to FIG. 2 and FIG. 4 together, a display apparatus 50D in FIG.4 is similar to the display apparatus 50B in FIG. 2. The displayapparatus 50D in FIG. 4 further includes the color filter layer 125. Thewavelength conversion layer 124 is disposed between the first substrate102 and the color filter layer 125. In addition, the orthogonalprojection of the color filter layer 125 on the first substrate 102 atleast partially overlaps with the orthogonal projection of the lightemitting device 118 on the first substrate 102. In the presentembodiment, the wavelength conversion layer 124 is, for instance (butnot limited to), a phosphor powder layer.

FIG. 5 to FIG. 8 are schematic partial cross-sectional views of displayapparatuses according to several embodiments of the disclosure.

Referring to FIG. 1 and FIG. 5 together, a display apparatus 50E in FIG.5 is similar to the display apparatus 50A in FIG. 1. A light emittingdevice 144 in FIG. 5 is a flip-chip LED. In the present embodiment, thelight emitting device 144 includes an electrode 134, a P-typesemiconductor layer 136, a multiple quantum well structure 138, anN-type semiconductor layer 140 and an electrode 142. The electrode 134and the electrode 142 may be disposed on the fourth insulating layer BP,and may be staggered with the driving device T. The N-type semiconductorlayer 140 is disposed on the electrode 132 and the electrode 142. TheP-type semiconductor layer 136 is disposed between the N-typesemiconductor layer 140 and the electrode 134. In addition, thetransparent conductive structure 104 is electrically connected to theelectrode 134 and the drain D. The display apparatus 50E furtherincludes a transparent conductive structure 105, which is electricallyconnected to the electrode 142. In the present embodiment, a height h2represents a distance from a bottom surface of the electrode 134 or theelectrode 142 to a top surface of the N-type semiconductor layer 140. Alight emitted by the light emitting device 144 can be reflected by thefirst reflection structure 122 and then emitted outward from the firstsubstrate 102 (as shown by the arrows in FIG. 5).

Referring to FIG. 5 and FIG. 6 together, a display apparatus 50F shownin FIG. 6 is similar to the display apparatus 50E in FIG. 5. The firstsubstrate 102 in FIG. 6 has the recess R, and the wavelength conversionlayer 124 is disposed in the recess R to form an embedded wavelengthconversion layer. In the present embodiment, the wavelength conversionlayer 124 is formed to be aligned with the bottom surface of the firstsubstrate 102 (as shown in FIG. 6). In other embodiments, the wavelengthconversion layer 124 may not be aligned with the bottom surface of thefirst substrate 102. That is, the wavelength conversion layer 124 may beformed protruding from or recessed in the bottom surface of the firstsubstrate 102.

Referring to FIG. 5 and FIG. 7 together, a display apparatus 50G shownin FIG. 7 is similar to the display apparatus 50E in FIG. 5. The displayapparatus 50G in FIG. 7 further includes the color filter layer 125. Thewavelength conversion layer 124 is disposed between the first substrate102 and the color filter layer 125. In addition, the orthogonalprojection of the color filter layer 125 on the first substrate 102 atleast partially overlaps with the orthogonal projection of the lightemitting device 144 on the first substrate 102. In the presentembodiment, the wavelength conversion layer 124 may be a phosphor powderlayer, but the disclosure is not limited thereto.

Referring to FIG. 8 and FIG. 6 together, a display apparatus 50H shownin FIG. 8 is similar to the display apparatus 50F in FIG. 6. The displayapparatus 50H in FIG. 8 further includes the color filter layer 125. Thewavelength conversion layer 124 is disposed between the first substrate102 and the color filter layer 125. Besides, the orthogonal projectionof the color filter layer 125 on the first substrate 102 at leastpartially overlaps with the orthogonal projection of the light emittingdevice 144 on the first substrate 102. In the present embodiment, thewavelength conversion layer 124 may be a phosphor powder layer, but theclosure is not limited thereto.

FIG. 9 is a schematic partial cross-sectional view of a displayapparatus according to an embodiment of the disclosure. Referring toFIG. 1, FIG. 5, and FIG. 9 together, a display apparatus 50I in FIG. 9has a plurality of sub-pixel areas including a sub-pixel area 501 a, asub-pixel area 501 b, and a sub-pixel area 501 c. The sub-pixel area 501a is similar to the display apparatus 50A shown in FIG. 1. The sub-pixelarea 501 b and the sub-pixel area 501 c are similar to the displayapparatus 50E shown in FIG. 5. Since a plurality of light emittingdevices of the display apparatus 50I in FIG. 9 may respectively emitlight in different wavelength ranges, the display apparatus 50I in FIG.9 may not include a wavelength conversion layer. In terms of structure,the plurality of light emitting devices may be vertical LEDs, flip-chipLEDs or a combination thereof. However, the disclosure is not limited tothe types of a plurality of light emitting devices, and may be alteredby persons having ordinary skill in the art according to their needs.

FIG. 10 to FIG. 17 are schematic partial cross-sectional views ofdisplay apparatuses according to several embodiments of the disclosure.

Referring to FIG. 1 and FIG. 10, a display apparatus 50J in FIG. 10 issimilar to the display apparatus 50A in FIG. 1. The display apparatus50J in FIG. 10 may include a plurality of light emitting devices, and apart of the light emitting devices emit light toward a first substrate202, and the other part of the light emitting devices emit light towarda second substrate 220, so as to form a double-sided light emittingdisplay apparatus. In one embodiment, the display apparatus 50J mayfurther include the first insulating layer 127 and the second insulatinglayer 132 as shown in FIG. 1, which are omitted from illustration inFIG. 10.

The display apparatus 50J in FIG. 10 includes the first substrate 202, alight emitting device 210 a, a light emitting device 210 b, a firstreflection structure 216, and the second substrate 220. The firstsubstrate 202 has a driving device T1 and a driving device T2, and thelight emitting device 210 a and the light emitting device 210 b aredisposed between the first substrate 202 and the second substrate 220.

The first substrate 202 may be a transparent material layer, such asglass. The driving device T1 may be a transistor, which includes a gateG1, a gate insulating layer GI1, a channel layer CH1, a source S1, and adrain D1. Likewise, the driving device T2 is a transistor, whichincludes a gate G2, a gate insulating layer GI2, a channel layer CH2, asource S2, and a drain D2. The gate G1 and the gate G2 may be disposedon the first substrate 202. The gate insulating layer GI1 and the gateinsulating layer GI2 may be located on the first substrate 202, and maybe located between the gate G1 and the channel layer CH1 and between thegate G2 and the channel layer CH2.

The light emitting device 210 a and the light emitting device 210 b areseparately disposed on the first substrate 202, and are respectivelystaggered with the driving device T1 and the driving device T2. In termsof structure, the light emitting device 210 a and the light emittingdevice 210 b of the present embodiment may be vertical-LEDs.

The light emitting device 210 a includes an electrode 204 a, a lightemitting structure 206 a and an electrode 208 a. The electrode 204 a maybe electrically connected to the driving device T1. The light emittingstructure 206 a is located between the electrode 204 a and the electrode208 a, and may include the P-type semiconductor layer, the multiplequantum well structure and the N-type semiconductor layer as shown inFIG. 1, which are omitted from illustration herein. The displayapparatus 50J may further include a transparent conductive structure 212a, which is disposed between the electrode 204 a and the driving deviceT1, and extending to electrically connect the electrode 204 a and thedrain D1. Besides, the display apparatus 50J may also include atransparent conductive structure 214 a, which is disposed at the secondsubstrate 220 and electrically connected to the electrode 208 a.

Likewise, the light emitting device 210 b may include an electrode 204b, a light emitting structure 206 b, and an electrode 208 b. Theelectrode 204 b may be electrically connected to the driving device T2,and is staggered with the driving device T2. The light emittingstructure 206 b is located between the electrode 204 b and the electrode208 b, and may also include the P-type semiconductor layer, the multiplequantum well structure and the N-type semiconductor layer as shown inFIG. 1, which are omitted from illustration herein. The displayapparatus 50J may further include a transparent conductive structure 212b, which is disposed between the electrode 204 b and the driving deviceT2 and extending to electrically connect the electrode 204 b and thedrain D2. In addition, the display apparatus 50J may also include atransparent conductive structure 214 b, which is disposed at the secondsubstrate 220 and electrically connected to electrode 208 b.

The first reflection structure 216 includes a first reflection structure216 a and a first reflection structure 216 b. The first reflectionstructure 216 a may cover the light emitting device 210 a, whileexposing a light emitting surface 218 a of the light emitting device 210a facing the first substrate 202. Another first reflection structure 216b may cover the light emitting device 210 b, while exposing a lightemitting surface 218 b of the light emitting device 210 b facing thelight second substrate 220. In the present embodiment, the firstreflection structure 216 a and the first reflection structure 216 b maybe metal layers. By disposing the first reflection structure 216 a andthe first reflection structure 216 b, the light emitted by the lightemitting device 210 a and the light emitting device 210 b may be guidedto be emitted toward the first substrate 202 and the second substrate220.

The display apparatus 50J may further include a light shielding layer222 a, which is disposed on one side of the second substrate 220, forinstance, above the second substrate 220. Moreover, an orthogonalprojection of the light shielding layer 222 a on the first substrate 202overlaps with an orthogonal projection of the light emitting device 210a on the first substrate 202. The light shielding layer 222 a is, forinstance, a BM or a reflective material. Accordingly, the lightshielding layer 222 a may prevent the light emitted by the lightemitting device 210 a from being emitted from the second substrate 220.Likewise, the display apparatus 50J may further include a lightshielding layer 222 b, which is disposed on one side of the firstsubstrate 202, for instance, the side of the first substrate 202 that isaway from the light emitting device 210 b. An orthogonal projection ofthe light shielding layer 222 b on the first substrate 202 overlaps withan orthogonal projection of the light emitting device 210 b on the firstsubstrate 202. Therefore, by disposing the light shielding layer 222 aand the light shielding layer 222 b, the light emitting device 210 a andthe light emitting device 210 b which are adjacent to each other may beprevented from interfering each other.

Referring to FIG. 10 and FIG. 11 together, a major difference betweenthe display apparatus 50J in FIG. 10 and a display apparatus 50K in FIG.11 is that the light emission directions of the light emitting devicesare different. Nevertheless, both the display apparatus 50J and thedisplay apparatus 50K are double-sided light emitting displayapparatuses.

To be more specific, a first reflection structure 216 c of the displayapparatus 50K may be disposed at the second substrate 220. An orthogonalprojection of the first reflection structure 216 c on the firstsubstrate 202 overlaps with the orthogonal projection of the lightemitting device 210 b on the first substrate 202. Particularly, thefirst reflection structure 216 c may be located between the secondsubstrate 220 and the transparent conductive structure 214 b. Thedisplay apparatus 50K includes a second reflection structure 224 a and asecond reflection structure 224 b. The second reflection structure 224 acovers the light emitting device 210 a, while exposing the lightemitting surface 218 a of the light emitting device 210 a facing thesecond substrate 220. The second reflection structure 224 b covers thelight emitting device 210 b, while exposing the light emitting surface218 b of the light emitting device 210 b facing the second substrate220. In the present embodiment, the light emission directions of thelight emitting device 210 a and the light emitting device 210 b are bothtoward the second substrate 220, and the light emitted by the lightemitting device 210 b is reflected by the first reflection structure 216c, and then emitted from the first substrate 202. In this way, thedisplay apparatus 50K may also be a double-sided light emitting displayapparatus.

Besides, the light shielding layer 222 a is disposed on one side of thefirst substrate 202, for instance, the side of the first substrate 202that is away from the light emitting device 210 a. The orthogonalprojection of the light shielding layer 222 a on the first substrate 202overlaps with the orthogonal projection of the light emitting device 210a on the first substrate 202, so as to block the light emitted from theemitting device 210 a toward the first substrate 202. The lightshielding layer 222 b is disposed on one side of the second substrate220, for instance, above the second substrate 220. The orthogonalprojection of the light shielding layer 222 b on the first substrate 202overlaps with the orthogonal projection of the light emitting device 210b on the first substrate 202, so as to block the light emitted by lightemitting device 210 b toward the second substrate 220. By disposing thelight shielding layer 222 a and the light shielding layer 222 b, thelight emitting device 210 a and the light emitting device 210 b may beprevented from interfering each other.

Accordingly, a part of the light emitted by the display apparatus 50K isemitted toward the second substrate 220, and the other part of the lightemitted is emitted toward the first substrate 202. Therefore, thedisplay apparatus 50K may also perform double-side light emission.

Referring to FIG. 10 and FIG. 12 together, a display apparatus 50L shownin FIG. 12 is similar to the display apparatus 50J in FIG. 10, and bothof them are double-sided light emitting display apparatuses. The firstreflection structure 216 a in FIG. 12 covers the light emitting device210 a, while exposing the light emitting surface 218 a of the lightemitting device 210 a facing the second substrate 220. In addition, thefirst reflection structure 216 b covers the light emitting device 210 b,while exposing the light emitting surface 218 b of the light emittingdevice 210 b facing the first substrate 202. For simplicity, the drivingdevice T1, the driving device T2, the transparent conductive structure212 a, and the transparent conductive structure 212 b as shown in FIG.10 are omitted in FIG. 12. Besides, the light emitting device 210 a andthe light emitting device 210 b in FIG. 12 share a transparentconductive structure 214 c. In other words, the transparent conductivestructure 214 c is electrically connected to both of the light emittingdevice 210 a and the light emitting device 210 b.

The light shielding layer 222 a of the display apparatus 50L is disposedon one side of the first substrate 202, for instance, the side of thefirst substrate 202 that is away from the light emitting device 210 a.The orthogonal projection of the light shielding layer 222 a on thefirst substrate 202 overlaps with the orthogonal projection of the lightemitting device 210 a on the first substrate 202. On the other hand, thelight shielding layer 222 b of the display apparatus 50L is disposed onone side of the second substrate 220, for instance, above the secondsubstrate 220. The orthogonal projection of the light shielding layer222 b on the first substrate 202 overlaps with the orthogonal projectionof the light emitting device 210 b on the first substrate 202.

Referring to FIG. 11 and FIG. 13 together, a display apparatus 50M shownin FIG. 13 is similar to the display apparatus 50K in FIG. 11. A majordifference between the above two is in the position of the firstreflection structure 216 c. In addition, the display apparatus 50M inFIG. 13 further includes a wavelength conversion layer 226.

In the present embodiment, the second substrate 220 may be a colorfilter layer. The second substrate 220 may be located between the firstreflection structure 216 c and the light emitting device 210 b. Inaddition, if a transmittance of the first reflection structure 216 c israther low, such as lower than 5%, a light shielding layer may not bedisposed at an exterior side of the second substrate 220 and the firstreflection structure 216 c.

The wavelength conversion layer 226 may be located between thetransparent conductive structure 214 c and the second substrate 220.Accordingly, the wavelength range of light emitted by the light emittingdevice 210 a and the light emitting device 210 b can be altered.

In addition, the driving device T1, the driving device T2, thetransparent conductive structure 212 a, and the transparent conductivestructure 212 b as shown in FIG. 11 are omitted in FIG. 13. Besides, thetransparent conductive structure 214 c in FIG. 13 may be electricallyconnected to both of the light emitting device 210 a and the lightemitting device 210 b.

Referring to FIG. 13 and FIG. 14 together, a display apparatus 50N shownin FIG. 14 is similar to the display apparatus 50M in FIG. 13. A majordifference between the above two is that the second substrate 220 inFIG. 14 may be a transparent substrate, which has a transparentconductive structure electrically connected to both of the lightemitting device 210 a and the light emitting device 210 b. Besides, awavelength conversion layer 226 a and a wavelength conversion layer 226b may be separately disposed on the second substrate 220 and the firstsubstrate 202. An orthogonal projection of the wavelength conversionlayer 226 a on the first substrate 202 overlaps with the orthogonalprojection of the light emitting device 210 a on the first substrate202. An orthogonal projection of the wavelength conversion layer 226 bon the first substrate 202 overlaps with the orthogonal projection ofthe light emitting device 210 b on the first substrate 202. Likewise, acolor filter layer 228 a and a color filter layer 228 b may beseparately disposed at the second substrate 220 and the first substrate202. An orthogonal projection of the color filter layer 228 a on thefirst substrate 202 overlaps with the orthogonal projection of the lightemitting device 210 a on the first substrate 202. An orthogonalprojection of the color filter layer 228 b on the first substrate 202overlaps with the light emitting device 210 b on the first substrate202. More particularly, the wavelength conversion layer 226 a may belocated between the color filter layer 228 a and the second substrate220, and the wavelength conversion layer 226 b may be located betweenthe color filter layer 228 b and the first substrate 202.

Referring to FIG. 13 and FIG. 15 together, a display apparatus 50O shownin FIG. 15 is similar to the display apparatus 50M in FIG. 13. A majordifference between the above two is that the second substrate 220 inFIG. 15 is a protecting glass. In addition, a color filter layer may notbe disposed in the present embodiment.

Referring to FIG. 15 and FIG. 16 together, a display apparatus 50P inFIG. 16 is similar to the display apparatus 50O in FIG. 15. A majordifference between the above two is that the display apparatus 50P inFIG. 16 further includes the light shielding layer 222 b, and the firstreflection structure 216 c is located between the second substrate 220and the wavelength conversion layer 226.

Referring to FIG. 13 and FIG. 17 together, a display apparatus 50Q inFIG. 17 is similar to the display apparatus 50M in FIG. 13. A majordifference between the above two is that the display apparatus 50Q inFIG. 17 further includes a light emitting device 210 c and a secondreflection structure 224 c. The light emitting device 210 c is adjacentto the light emitting device 210 b. The second reflection structure 224c covers the light emitting device 210 c, while exposing a lightemitting surface 218 c of the light emitting device 210 c facing thesecond substrate 202. As similar to the light emitting device 210 b andthe second reflection structure 224 b, the light emitted by the lightemitting device 210 c is reflected by the first reflection structure 216c, and then emitted from the first substrate 202. By simultaneouslydisposing the light emitting device 210 b and the light emitting device210 c, illumination efficiency of the display apparatus 50Q toward thefirst substrate 202 may be improved.

FIG. 18 to FIG. 28 are schematic partial cross-sectional views ofdisplay apparatuses according to several embodiments of the disclosure.In these embodiments, both of a light emitting device 234 a and a lightemitting device 234 b are flip-chip LEDs.

Referring to FIG. 18, the light emitting device 234 a may include anelectrode 229 a, a light emitting structure 230 a and an electrode 232a. The electrode 229 a and the electrode 232 a are separately disposedon the gate insulating layer GI1, and the light emitting structure 230 ais disposed on the electrode 229 a and the electrode 232 a. The lightemitting structure 230 a may include the P-type semiconductor layer, themultiple quantum well structure, and the N-type semiconductor layer asshown in FIG. 5, which are omitted from illustration herein. Likewise,the light emitting device 234 b may include an electrode 229 b, a lightemitting structure 230 b and an electrode 232 b. The electrode 229 b andthe electrode 232 b are separately disposed on a gate insulating layerGI2, and the light emitting structure 230 b is disposed on the electrode229 b and the electrode 232 b. The light emitting structure 230 b mayinclude the P-type semiconductor layer, the multiple quantum wellstructure, and the N-type semiconductor layer as shown in FIG. 5, whichare omitted from illustration herein. A second reflection structure 235a covers the light emitting device 234 a, while exposing a lightemitting surface 237 a of the light emitting device 234 a. In addition,a second reflection structure 235 b covers the light emitting device 234b, while exposing a light emitting surface 237 b of the light emittingdevice 234 b.

In addition, a display apparatus 50R may further include a transparentconductive structure 236 a and a transparent conductive structure 238 a,which are separately disposed between the electrode 229 a and the gateinsulating layer GI1, and between the electrode 232 a and the gateinsulating layer GI1, respectively. The transparent conductive structure236 a extends to be electrically connected to a drain D1 and theelectrode 229 a. Likewise, the display apparatus 50R may also include atransparent conductive structure 236 b and a transparent conductivestructure 238 b, which are separately disposed between the electrode 229b and the gate insulating layer GI2, respectively. The transparentconductive structure 236 b extends to electrically connect the drain D2and the electrode 229 b. Since the electrode 229 a and the electrode 232a are both disposed on the first substrate 202, a transparent conductivestructure may not be disposed at the second substrate 220 of the presentembodiment. Likewise, since the electrode 229 b and the electrode 232 bare both disposed on the first substrate 202, a transparent conductivestructure may not be disposed at the second substrate 220 in the presentembodiment.

Referring to FIG. 18 and FIG. 19 together, a display apparatus 50S inFIG. 19 is similar to the display apparatus 50R in FIG. 18. A majordifference between the above two is that the display apparatus 50S inFIG. 19 may not include the second reflection structure 235 a and thesecond reflection structure 235 b as shown in FIG. 18. Besides, forsimplicity, the driving device T1, the driving device T2, thetransparent conductive structure 236 a, the transparent conductivestructure 236 b, and the transparent conductive structure 238 b in FIG.18 are omitted in FIG. 19.

Referring to FIG. 19 and FIG. 20 together, a display apparatus 50T shownin FIG. 20 is similar to the display apparatus 50S in FIG. 19. A majordifference between the above two is that the display apparatus 50T inFIG. 20 may not include the light shielding layer (such as the lightshielding layer 222 b shown in FIG. 19) disposed on the second substrate220, and the second substrate 220 may be located between the firstreflection structure 216 c and the light emitting device 234 b.

Referring to FIG. 20 and FIG. 21 together, a display apparatus 50U inFIG. 21 is similar to the display apparatus 50T in FIG. 20. A majordifference between the above two is that display apparatus 50U in FIG.21 further includes the second reflection structure 235 a and the secondreflection structure 235 b, and the first reflection structure 216 c islocated between the second substrate 220 and the light emitting device234 b. The second reflection structure 235 a covers the light emittingdevice 234 a, while exposing the light emitting surface 237 a of thelight emitting device 234 a facing the second substrate 220. The secondreflection structure 235 b covers the light emitting device 234 b, whileexposing the light emitting surface 237 b of the light emitting device234 b facing the second substrate 220.

Referring to FIG. 19 and FIG. 22 together, a display apparatus 50V inFIG. 22 is similar to the display apparatus 50S in FIG. 22. A majordifference between the above two is that display apparatus 50V in FIG.22 further includes the second reflection structure 235 a and the firstreflection structure 240. The second reflection structure 235 a coversthe light emitting device 234 a, while exposing the light emittingsurface 237 a of the light emitting device 234 a facing the secondsubstrate 220. The first reflection structure 240 covers the lightemitting device 234 b, while exposing the light emitting surface 237 bof the light emitting device 234 b facing the second substrate 202.Therefore, in one embodiment, the light shielding layer 222 b isoptionally disposed at the second substrate 220 depending on thereflectivity of the first reflection structure 240.

Referring to FIG. 20 and FIG. 23 together, a display apparatus 50W inFIG. 23 is similar to the display apparatus 50T in FIG. 20. A majordifference between the above two is that display apparatus 50W in FIG.23 further includes a wavelength conversion layer 242 a and a wavelengthconversion layer 242 b. The wavelength conversion layer 242 a may bedisposed on a surface of the light emitting device 234 a facing thesecond substrate 220, and the wavelength conversion layer 242 b may bedisposed on a surface of the light emitting device 234 b facing thesecond substrate 220. In addition, the first reflection structure 216 cin FIG. 23 is disposed between the second substrate 220 and the lightemitting device 234 b.

Referring to FIG. 20 and FIG. 24 together, a display apparatus 50X inFIG. 24 is similar to the display apparatus 50T in FIG. 20. A majordifference between the above two is that the display apparatus 50X inFIG. 24 further includes a wavelength conversion layer 244, which may bedisposed at the second substrate 220. An orthogonal projection of thewavelength conversion layer 244 on the first substrate 202 overlaps withorthogonal projections of the light emitting device 234 a and the lightemitting device 234 b on the first substrate 202. More particularly, thesecond substrate 220 may be located between the first reflectionstructure 216 c and the wavelength conversion layer 244, and thewavelength conversion layer 244 may be located between the secondsubstrate 220 and the light emitting device 234 b.

Referring to FIG. 19 and FIG. 25 together, a display apparatus 50Y inFIG. 25 is similar to the display apparatus 50S in FIG. 19. A majordifference between the above two is that the display apparatus 50Y inFIG. 25 further includes a wavelength conversion layer 246 a and awavelength conversion layer 246 b. The wavelength conversion layer 246 ais disposed at the second substrate 220, and is located between thesecond substrate 220 and the light emitting device 234 a, so that anorthogonal projection of the wavelength conversion layer 246 a on thefirst substrate 202 overlaps with an orthogonal projection of the lightemitting device 234 a on the first substrate 202. The wavelengthconversion layer 246 b is disposed on the first substrate 202, and thefirst substrate 202 is located between the light emitting device 234 band the wavelength conversion layer 246 b, such that an orthogonalprojection of the wavelength conversion layer 246 b on the firstsubstrate 202 overlaps with an orthogonal projection of the lightemitting device 234 b on the first substrate 202.

Referring to FIG. 21 and FIG. 26 together, a display apparatus 50Z inFIG. 26 is similar to the display apparatus 50U in FIG. 21. A majordifference between the above two is that the display apparatus 50Z inFIG. 26 further includes a wavelength conversion layer 248 and a colorfilter layer 250, which are disposed at the second substrate 220. Moreparticularly, the color filter layer 250 may be located between thesecond substrate 220 and the wavelength conversion layer 248, and anorthogonal projection of the color filter layer 250 on the firstsubstrate 202 overlaps with the orthogonal projections of the lightemitting device 234 a and the light emitting device 234 b on the firstsubstrate 202. Besides, the second substrate 220 may be located betweenthe first reflection structure 216 c and the color filter layer 250.

Referring to FIG. 25 and FIG. 27 together, a display apparatus 60A inFIG. 27 is similar to the display apparatus 50Y in FIG. 25. A majordifference of the above two is that the display apparatus 60A in FIG. 27further includes the second reflection structure 235 a, the secondreflection structure 235 b, a color filter layer 252 a, and a colorfilter layer 252 b. The second reflection structure 235 a may cover thelight emitting device 234 a, while exposing the light emitting surface237 a of the light emitting device 234 a facing the second substrate220. The second reflection structure 235 b covers the light emittingdevice 234 b, while exposing the light emitting surface 237 b of thelight emitting device 234 b facing the second substrate 220. The colorfilter layer 252 a and the color filter layer 252 b are respectivelydisposed at the second substrate 220 and the first substrate 202. Moreparticularly, the color filter layer 252 a is located between the secondsubstrate 220 and the wavelength conversion layer 246 a, and the colorfilter layer 252 b is located between the first substrate 202 and thewavelength conversion layer 246 b.

Referring to FIG. 26 and FIG. 28 together, a display apparatus 60B inFIG. 28 and the display apparatus 50Z in FIG. 26. A major difference ofthe above two is that the display apparatus 60B in FIG. 28 furtherincludes a light emitting device 234 c and a second reflection structure235 c. The light emitting device 234 c is adjacent to the light emittingdevice 234 b. The second reflection structure 235 c covers the lightemitting device 234 c, while exposing a light emitting surface 237 c ofthe light emitting device 234 c facing the second substrate 220. Assimilar to the light emitting device 234 b, the light emitting device234 c also includes an electrode 228 c, a light emitting structure 230 cand an electrode 232 c. By disposing both of the light emitting device234 b and the light emitting device 234 c in the display apparatus 60B,illumination efficiency of the display apparatus 60B toward the firstsubstrate 202 may be improved.

In summary of the above, the light emitted by the light emitting devicecan be reflected by the first reflection structure, and then emittedoutward from the first substrate. In this way, the design of the presentembodiment is advantageous for readily changing the light emissiondirection of the light emitting device, such that the display apparatusis more likely to meets different design requirements. On the otherhand, through the aforementioned design, the present embodiment may beapplied to a large size display apparatus.

Although the disclosure has been disclosed by the embodiments as above,the embodiments are not intended to limit the disclosure. People havingordinary skill in the art can make some changes and modificationswithout departing from the spirit and the scope of the disclosure.Therefore, the protected scope of the disclosure shall be defined by theattached claims.

What is claimed is:
 1. A display apparatus, comprising: a firstsubstrate; a light emitting device, disposed on the first substrate; anda first insulating layer, located on the first substrate, wherein thefirst insulating layer has an opening, and the light emitting device isdisposed at the opening, wherein a portion of a light emitted by thelight emitting device passes through the first substrate, and wherein anangle between a side wall of the opening and the first substrate isgreater than or equal to 60° and less than or equal to 150°.
 2. Thedisplay apparatus as claimed in claim 1, further comprising a colorfilter layer, wherein the color filter is disposed in an emission pathof the light.
 3. The display apparatus as claimed in claim 2, whereinthe color filter layer is disposed on a side of the first substrate awayfrom the light emitting device.
 4. The display apparatus as claimed inclaim 2, wherein a width of the color filter layer is greater than awidth of the opening of the first insulating layer.
 5. The displayapparatus as claimed in claim 1, further comprising a light shieldinglayer, wherein the light shielding layer is disposed on a side of thefirst substrate away from the light emitting device.
 6. The displayapparatus as claimed in claim 5, wherein the light shielding layer doesnot overlapped with the light emitting device in a normal direction ofthe first substrate.
 7. The display apparatus as claimed in claim 1,further comprising a wavelength conversion layer, wherein the wavelengthconversion layer is disposed in an emission path of the light.
 8. Thedisplay apparatus as claimed in claim 7, wherein the wavelengthconversion layer is at least partially overlapped with the lightemitting device and the first insulating layer in a normal direction ofthe first substrate.
 9. The display apparatus as claimed in claim 7,wherein the wavelength conversion layer is disposed on a side of thefirst substrate away from the light emitting device.
 10. The displayapparatus as claimed in claim 7, wherein the first substrate has arecess on a side of the first substrate away from the light emittingdevice, and wherein the wavelength conversion layer is conformallyformed at the side of the first substrate.
 11. The display apparatus asclaimed in claim 1, further comprising a second insulating layer,wherein the second insulating layer is disposed on the first insulatinglayer.
 12. The display apparatus as claimed in claim 11, wherein theopening of the first insulating layer is filled by the second insulatinglayer, and wherein the light emitting device is at least partiallyembedded in the second insulating layer.
 13. The display apparatus asclaimed in claim 11, wherein the second insulating layer is aplanarization layer.
 14. The display apparatus as claimed in claim 1,further comprising a reflection structure, wherein the reflectionstructure is disposed on the first insulating layer, and is at leastpartially overlapped with the light emitting device in a normaldirection of the first substrate.
 15. The display apparatus as claimedin claim 1, further comprising a third insulating layer, wherein thethird insulating layer is disposed on the first insulating layer. 16.The display apparatus as claimed in claim 15, wherein the thirdinsulating layer comprises a light shielding material.
 17. The displayapparatus as claimed in claim 15, further comprising a metal layer, andthe third insulating layer is in contact with the metal layer.
 18. Thedisplay apparatus as claimed in claim 1, wherein the first insulatinglayer is a multilayer structure.
 19. The display apparatus as claimed inclaim 18, wherein at least one layer in the multilayer structurecomprises a light shielding material.
 20. The display apparatus asclaimed in claim 1, further comprising a second substrate, wherein thefirst insulating layer and the light emitting device are located betweenthe first substrate and the second substrate.